Infineon BSS209PWH6327XTSA1 P-Channel MOSFET: Datasheet, Pinout, and Application Circuit Guide

The Infineon BSS209PWH6327XTSA1 is a robust P-Channel MOSFET housed in a compact SOT-363 (SC-88) package, designed for high-efficiency power management in a minimal footprint. This device is engineered for low voltage, high-speed switching applications, making it an ideal choice for portable electronics, power distribution switches, load management, and battery protection circuits.

This guide provides a detailed overview of its key specifications, pin configuration, and a practical application circuit to help designers implement this component effectively.

Datasheet Overview and Key Specifications

The BSS209PWH6327XTSA1 is characterized by its very low on-state resistance (RDS(on)) and enhanced logic-level gate control. Key absolute maximum ratings and electrical characteristics include:

Drain-Source Voltage (VDS): -20 V

Continuous Drain Current (ID): -2.3 A

On-State Resistance (RDS(on)): Typically 33 mΩ at VGS = -4.5 V, ID = -2.3 A. This low RDS(on) is critical for minimizing conduction losses and improving overall system efficiency.

Gate Threshold Voltage (VGS(th)): Typically -0.9 V to -2.0 V, ensuring it can be easily driven by standard logic-level signals (3.3 V or 5 V) from microcontrollers or other ICs.

Package: SOT-363, a space-saving package that contains two MOSFETs. In this case, it is a single P-Channel transistor.

Pinout Configuration

The SOT-363 package has six pins, but for the single P-Channel BSS209PWH6327XTSA1, the internal connection is optimized. The pinout is as follows:

Pin 1 (Source 1): Connected to the source terminal of the MOSFET.

Pin 2 (Gate 1): Connected to the gate terminal.

Pin 3 (Drain 1): Connected to the drain terminal.

Pins 4, 5, 6: These are internally connected to the drain (Pin 3) and serve to reduce thermal resistance and improve power dissipation. Connecting all drain pins to the PCB pad is essential for optimal performance.

Important: Always consult the official datasheet for the mechanical drawing to confirm the pin 1 identifier and landing pattern for your PCB design.

Application Circuit Guide: A Basic Load Switch

A fundamental application for a P-Channel MOSFET is a high-side load switch. This circuit is used to connect or disconnect power to a load (e.g., a sensor module, motor, or LED strip) from a microcontroller.

Circuit Components:

MCU: Any 3.3V or 5V microcontroller (e.g., Arduino, ESP32).

MOSFET: BSS209PWH6327XTSA1.

Resistors: R1 (10kΩ pull-down), R2 (optional gate resistor, e.g., 100Ω).

Load: Your specific device (e.g., a 5V fan).

Circuit Operation:

1. Default OFF State: When the MCU's GPIO pin is in a high-impedance state (input mode) or set to logic HIGH (3.3V/5V), the 10kΩ pull-down resistor (R1) ensures the gate voltage (VG) is equal to the source voltage (VS). Since VGS = 0 V, the MOSFET is off, and no current flows to the load.

2. Turning ON the Load: To activate the load, the MCU pin is set to output logic LOW (0V). This pulls the gate voltage to 0V. Since the source is connected to the positive supply (e.g., 5V), this creates a VGS of -5V, which is well beyond the threshold voltage. The MOSFET turns on, its low RDS(on) creates a path for current, and power is delivered to the load.

3. Protection: Resistor R2 can be added in series with the gate to dampen any ringing and limit current surges into the gate pin during switching, protecting the MCU.

Key Advantage: This high-side configuration is often preferred over using an N-Channel MOSFET because it switches the positive voltage rail, keeping the ground reference of the load common with the system, which simplifies design.

ICGOOODFIND: The Infineon BSS209PWH6327XTSA1 stands out for its exceptional power density, combining high current handling and very low RDS(on) in an extremely small package. Its logic-level compatibility makes it a versatile and efficient solution for modern space-constrained, battery-powered designs, simplifying drive circuitry and reducing overall system cost.

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Keywords: P-Channel MOSFET, Load Switch, Logic-Level Gate, Low RDS(on), SOT-363 Package.