Infineon IPA65R150CFD: 650V CoolMOS™ CFD7 Power Transistor with Low Gate Charge and Superior Switching Performance

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power semiconductor components. Addressing these challenges head-on, Infineon Technologies introduces the IPA65R150CFD, a 650V CoolMOS™ CFD7 power transistor that sets a new benchmark for performance in hard-switching and soft-switching topologies. This device exemplifies the cutting-edge advancements in superjunction MOSFET technology, engineered specifically to minimize losses and maximize switching frequency.

A defining characteristic of the IPA65R150CFD is its exceptionally low gate charge (Qg). This parameter is critical as it directly influences the driving losses of the switch. A lower Qg means less energy is required to charge and discharge the gate capacitance during each switching cycle. This translates to reduced stress on the gate driver circuitry, lower overall switching losses, and the capability to operate at higher frequencies without a prohibitive increase in drive-related power dissipation. This feature is indispensable for high-frequency SMPS, telecom, and server power applications where every watt saved contributes to a higher overall system efficiency.

Complementing the low gate charge is the transistor's superior switching performance. The CFD7 technology incorporates an integrated fast body diode and optimized internal cell structure. This design drastically reduces reverse recovery charge (Qrr) and eliminates the need for an external anti-parallel diode in many circuits. The result is significantly softer reverse recovery behavior, which minimizes voltage overshoot and electromagnetic interference (EMI). This allows designers to simplify their snubber circuits, reduce component count, and create more compact and reliable power supplies.

Furthermore, the IPA65R150CFD boasts a low effective output capacitance (Coss,eff). The energy stored in the output capacitance is lost during every switching event in hard-switching applications. By minimizing this stored energy, the CFD7 device further reduces switching losses, particularly at light load conditions, enhancing efficiency across a wide load range.

With a maximum RDS(on) of just 150mΩ, the device offers low conduction losses, ensuring efficient power handling. Its high voltage rating of 650V provides a robust safety margin for operation in universal input mains applications (85 – 305 VAC) and power factor correction (PFC) stages.

ICGOOODFIND: The Infineon IPA65R150CFD is a premier 650V superjunction MOSFET that excels in high-performance power conversion. Its standout combination of ultra-low gate charge, minimized reverse recovery losses, and fast switching capability makes it an optimal choice for designers aiming to push the boundaries of efficiency and power density in next-generation switch-mode power supplies, industrial drives, and renewable energy systems.

Keywords: Low Gate Charge, Superior Switching Performance, 650V MOSFET, CoolMOS™ CFD7, High Efficiency.