STMicroelectronics has launched the Smart StripFET F8 series – a next‑gen power MOSFET family optimized for low‑voltage automotive applications. Covering 40V and 100V ratings, the series reduces internal capacitance and gate charge to cut switching losses, boost conversion efficiency, and improve active area utilization – ideal for dense, high‑efficiency onboard power systems.

The first model, STL059N4S8AG, is an AEC‑Q101‑qualified 40V device featuring core RDS(on) as low as 0.59mΩ, delivering class‑leading conduction and switching performance. Housed in a 5×6mm PowerFLAT package with low parasitic inductance, it supports compact system designs.

With a maximum junction temperature of 175°C, the device withstands harsh automotive environments – perfect for battery management systems, high‑current distribution, and solid‑state relays, improving both stability and efficiency.

ST’s eDSim simulation tool fully supports the StripFET F8 family, enabling fast, accurate electrical validation for switched‑mode power and analog circuits – helping engineers optimize designs before prototyping.

ICgoodFind Take:
0.59mΩ + 175°C + AEC‑Q101 – this is a serious contender for automotive power distribution. ST is bringing low‑loss, high‑temp capability in a compact footprint. For procurement, this adds a strong alternative to Infineon and onsemi in 40V automotive MOSFET sourcing.